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IXTT30N60L2 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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IXTT30N60L2 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  isc N-Channel MOSFET Transistor IXTT30N60L2 www.iscsemi.com 2023-9-7 1 FEATURES · Drain Current -ID=30A@ TC=25℃ · Drain Source Voltage -VDSS= 600V(Min) · Static Drain-Source On-Resistance -RDS(on) = 400mΩ(Max)@VGS= 10V DESCRIPTION · Soft start controls · Linear amplifiers · Current regulators ABSOLUTE MAXIMUM RATINGS(Ta=25℃) THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ± 20 V ID Drain Current-Continuous 30 A IDM Drain Current-Single Pluse pulse width limited by TJM 80 A PD Total Dissipation 540 W TJ Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.23 ℃ /W |
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