 |
Electronic Components Datasheet Search |
|
|
Electronic Components Datasheet Search |
|
MBR60H100CT Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
|
|
|||||||||||||||||||||||||||||
MBR60H100CT Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
|
|
1 / 2 page  Schottky Barrier Rectifier Diode MBR60H100CT www.iscsemi.com 1 FEATURES · High Surge Capacity · Low Power Loss · High Efficiency APPLICATIONS · Power Management · Instrumentation · Power Supply-Output Rectification ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRWM VR Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage 100 V IF(AV) Average Rectified Forward Current, TC=155℃ Per diode 30 A Per device 60 A IFSM Nonrepetitive Peak Surge Current, (Surge applied at rated load conditions halfwave, single phase, 60 Hz) 350 A IFRM Peak Repetitive Forward Current (Square Wave, 20 kHz, TC = 151°C) 60 A TJ Max. Junction Temperature 175 ℃ Tstg Storage Temperature Range -65~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case(Min. Pad) 1.0 ℃ /W |
Similar Part No. - MBR60H100CT |
|
Similar Description - MBR60H100CT |
|
|
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
New Zealand ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
