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Q8016LH6TP Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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Q8016LH6TP Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() isc Thyristor Q8016LH6TP www.iscsemi.com 1 FEATURES · Blocking Voltage to 800 V · Uniform Gate Trigger Currents in Three Quadrants APPLICATIONS · high performance full-wave ac control applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDRM Repetitive peak off-state voltage 800 V VRRM Repetitive peak off-state voltage 800 V IT(RMS) RMS on-state current (full sine wave) TC=90℃ 16 A ITSM Peak Non-Repetitive Surge Current,Full Cycle 50Hz,20ms 167 A 60Hz,16.7ms 200 A I2t I2t value for fusing (tp=8.3ms) 166 A2S PG(AV) Average gate power dissipation,TJ=125℃ 0.5 W IGTM Peak gate Trigger current,tp=20us,TJ=125℃ 4.0 A Tj Max. Operating junction temperature 125 ℃ Tstg Storage temperature -40~150 ℃ dV/dt VD=VDRM,gate open,TJ=125℃ 475 V/us di/dt Critical rate of rise of on-state current, f = 120 Hz,,TJ=125℃ 100 A/us RθJC Thermal Resistance, Junction−to−Case 2.1 ℃ /W |
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