TN1625 datasheet(3/9 Pages) STMICROELECTRONICS

3 / 9 page

TN1625, TYN616, TYN816

Characteristics

3/9

Figure 1.

Maximum average power

dissipation versus average on-state

current

Figure 2.

Average and D.C. on-state current

versus case temperature

P(W)

(A)

T(AV)

α = 180°

360°

100

125

(A)

T(AV)

(°C)

case

α = 180°

D.C.

Figure 3.

Average and D.C. on-state current

versus ambient temperature

(copper surface under tab: S=1cm2)

(D2PAK)

Figure 4.

Relative variation of thermal

impedance versus pulse duration

100

125

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

(A)

T(AV)

(°C)

amb

α = 180°

D.C.

1E-3

1E-2

1E-1

1E+0

1E+1

1E+2

5E+2

0.01

0.10

1.00

K=[Z /R

th]

t (s)

Zth(j-c)

Zth(j-a)

Figure 5.

Relative variation of gate trigger

current, holding current and

latching current versus junction

temperature

Figure 6.

Surge peak on-state current versus

number of cycles

-40

-20

100

120

140

0.0

0.5

1.0

1.5

2.0

2.5

T (°C)

I,I ,I [T ] /

GT H L

,I ,I [T =25°C]

GT H L

IGT

IH & IL

100

1000

100

120

140

160

180

200

(A)

TSM

Number of cycles

Non repetitive

T initial=25°C

Repetitive

T =110°C

t =10ms

One cycle

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