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MDV04-600 Datasheet(PDF) 3 Page - STMicroelectronics |
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MDV04-600 Datasheet(HTML) 3 Page - STMicroelectronics |
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3 / 4 page ![]() 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Ip(A) PF(av)(W) Fig. 1: Power dissipation versus peak forward cur- rent (triangular waveform, δ=0.5). 1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 1E+3 1E-3 1E-2 1E-1 1E+0 t(s) K=[Zth(j-a)/Rth(j-a)] Single pulse δ = 0.1 δ = 0.2 δ = 0.5 T δ=tp/T tp Fig. 2: Relative variation of thermal impedance junction to ambient versus pulse duration (epoxy printed circuit board, e(Cu)=35 µm), recommended pad layout). 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 1E-2 1E-1 1E+0 1E+1 1E+2 VFM(V) IFM(A) Tj=125°C Tj=25°C Fig. 3: Forward voltage drop versus forward cur- rent (maximum values). 0 20 40 60 80 100 120 140 160 180 200 0 50 100 150 200 250 300 350 400 dIF/dt(A/µs) trr(ns) IF=Ip 90% confidence Tj=125°C Fig. 4: Reverse recovery time versus dIF/dt. 0 20 40 60 80 100 120 140 160 180 200 0 5 10 15 20 VFP(V) IF=Ip 90% confidence Tj=125°C dIF/dt(A/µs) Fig. 5: Transient peak forward voltage versus dIF/dt. 0 20 40 60 80 100 120 140 160 180 200 0 50 100 150 200 250 300 350 tfr(ns) IF=Ip 90% confidence Tj=125°C Vfr=1.5V dIF/dt(A/µs) Fig. 6: Forward recovery time versus dIF/dt. MDV04-600 3/4 |
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