MJE3440 datasheet(2/5 Pages) STMICROELECTRONICS

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THERMAL DATA

Rthj-ca se

Thermal Resistance Junction-case

Max

8.33

oC/W

ELECTRICAL CHARACTERISTICS (Tcase =25

oC unless otherwise specified)

Symb ol

Parameter

Test Cond ition s

Mi n.

Typ .

Max.

Un it

ICBO

Collect or Cut-off

Current (IE =0)

VCB =250 V

µA

ICEV

Collect or Cut-off

Current (VBE = -1.5V)

VCE =300 V

500

µA

ICEO

Collect or Cut-off

Current (IB =0)

VCE =200 V

µA

IEBO

Emitt er Cut-off Current

(IC =0)

VEB =5 V

µA

VCE(sat)

∗ Collector-Emitter

Saturat ion Voltage

IC =50 mA

IB =4 mA

0.5

VBE(s at)

∗ Base-Emitter

Saturat ion Voltage

IC =50 mA

IB =4 mA

0.3

VBE

∗

Base-Emitt er Voltage

IC =50 mA

VCE =10 V

0.8

hFE

∗

DC Current G ain

IC =2 mA

VCE =10 V

IC =20 mA

VCE =10 V

200

hfe

Small Signal Current

Gain

IC =5 mA

VCE =10 V

f= 1 KHz

Transistor Frequency

IC =10 mA

VCE =10 V

f= 5 MHz

MHz

CCBO

∗

Collect or-Base

Capacitance

VCB =10 V

IE =0

f= 1 MHz

∗ Pulsed: Pulse duration = 300µs, duty cycle ≤ 1.5 %

Safe Operating Area

Derating Curve

MJE3440

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