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MK50H27DIP Datasheet(PDF) 42 Page - STMicroelectronics |
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MK50H27DIP Datasheet(HTML) 42 Page - STMicroelectronics |
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42 / 56 page ![]() SECTION 5 ELECTRICAL SPECIFICATIONS ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit TUB Temperature Under Bias -25 to +100 °C Tstg Storage Temperature -65 to +150 °C VG Voltage on any pin with respect to ground -0.5 to VCC+0.5 V Ptot Power Dissipation 0.5 W Stresses above those listed under ”Absolute Maximum Rating” may cause permanent damage to the above device. This is a stress rating only and functional operation of the device at these or any other condition above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for ex- tended periods may affect device reliability. DC CHARACTERISTICS TA=0 °Cto70 °C, VCC =+5 V ±5 percent unless otherwise specified. Symbol Parameter Min. Typ. Max. Units VIL -0.5 +0.8 V VIH +2.0 VCC+0.5 V VOL @ IOL = 3.2 mA +0.5 V VOH @ IOH= -0.4 mA +2.4 V IIL @ VIN = 0.4 to VCC +10 mA ICC @ TSCT = 100 ns 50 µA CAPACITANCE f = 1MHz Symbol Parameter Min. Typ. Max. Units CIN Capacitance on Input pins 10 pF COUT Capacitance on Output Pins 10 pF CIO Capacitance on I/O pins 20 pF AC TIMING SPECIFICATIONS TA =0 °Cto 70 °C, VCC =+5 V ±5 percent, unless otherwise specified. MK50H27 -16 -25 -33 -16/25/33 No Signal Symbol Parameter Test Condition Min. Min. Min. Max. Units 1 SYSCLK TSCT SYSCLK period 60 40 30 10000 ns 2 SYSCLK TSCL SYSCLK low time 24 16 12 ns 3 SYSCLK TSCH SYSCLK high time 24 16 12 ns 4 SYSCLK TSCR Rise time of SYSCLK 0 0 0 8 ns 5 SYSCLK TSCF Fall time of SYSCLK 0 0 0 8 ns 6 TCLK TTCT TCLK period 20 20 20 ns 7 TCLK TTCL TCLK low time 8 8 8 ns 8 TCLK TTCH TCLK high time 8 8 8 ns 9 TCLK TTCR Rise time of TCLK CL = 50 pF 0 0 0 8 ns 10 TCLK TTCF Fall time of TCLK 0 0 0 8 ns 11 TD TTDP TD data propagation delay after the falling edge of TCLK CL = 50 pF 13 ns 12 TD TTDH TD data hold time after the falling edge of TCLK 555 ns MK50H27 42/56 |
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