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AOB66918L Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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AOB66918L Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  isc N-Channel MOSFET Transistor AOB66918L www.iscsemi.com 1 FEATURES · Drain Current -ID= 120A@ TC=25℃ · Drain Source Voltage -VDSS=100V(Min) · Drain-Source Saturation Voltage -RDS(on) = 5mΩ(Max)@VGS= 10V, ID= 20A APPLICATIONS · Telecom Hot-Swap · Load switch ABSOLUTE MAXIMUM RATINGS(Ta=25℃) THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGS Gate-Source Voltage-Continuous ± 20 V ID Drain Current-Continuous 120 A PD Total Dissipation 375 W TJ Max. Operating Junction Temperature 175 ℃ Tstg Storage Temperature -55~175 ℃ SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.4 ℃ /W |
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