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BUF742 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # BUF742
Description  Silicon NPN Power Transistor
PDF  2 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BUF742 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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Silicon NPN Power Transistor
BUF742
www.iscsemi.com
1
DESCRIPTION
· Collector-Emitter Breakdown Voltage
-V(BR)CEO= 400V(Min)
· Collector-Emitter Saturation Voltage
-VCE(sat) :0.4V(Max) @IC= 2.5A
APPLICATIONS
· Electronic lamp ballast circuits
· Switch-mode power supplies
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
900
V
VCEO
Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
11
V
IC
Collector Current
5
A
ICM
Collector Peak Current
7.5
A
IB
Base current
2.5
A
IBM
Base peak current
4
A
PC
Total Power Dissipation
50
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
2.5
℃
/W


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