Silicon NPN Power Transistor

BUW64A/B/C

www.iscsemi.com

2

ELECTRICAL CHARACTERISTICS （TC=25℃ unless otherwise specified）

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP. MAX UNIT

VCEO

Collector-Emitter

Voltage

BUW64A

IC= 10mA ; IB= 0A

90

--

--

V

BUW64B

110

BUW64C

130

VCE(sat)-1

Collector-Emitter

Saturation Voltage

BUW64A/B

IC= 5A; IB= 0.5A

--

--

0.8

V

BUW64C

IC= 4A; IB= 0.4A

0.7

VCE(sat)-2

Collector-Emitter Saturation Voltage

IC= 7A; IB= 0.7A

--

--

1.5

V

VBE(sat)

Base-Emitter

Saturation Voltage

BUW64A/B

IC= 5A; IB= 0.5A

--

--

1.5

V

BUW64C

IC= 4A; IB= 0.4A

1.4

ICBO

Collector-Base

Cutoff Current

BUW64A

VCB= 140V; IE= 0A

--

--

0.1

mA

BUW64B

VCB= 160V; IE= 0A

0.1

BUW64C

VCB= 180V; IE= 0A

0.1

IEBO

Emitter Cutoff Current

VEB= 7V; IC=0A

--

--

0.1

mA

hFE-1

DC Current Gain

IC= 0.2A ; VCE= 2V

30

--

--

--

hFE-2

DC Current Gain

BUW64A/B

IC= 5A ; VCE= 2V

20

--

--

--

BUW64C

IC= 4A ; VCE= 2V

20

PRODUCT DISCLAIMER

ISC reserves the rights to make changes of the content herein the datasheet at any time without

notification. The information contained herein is presented only as a guide for the applications of our

products.

ISC products are intended for usage in general electronic equipment. The products are not designed for