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PKC-136 Datasheet(PDF) 2 Page - STMicroelectronics

Part # PKC-136
Description  PEAK CLAMP
PDF  5 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

PKC-136 Datasheet(HTML) 2 Page - STMicroelectronics

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PKC-136
2/5
Symbol
Parameter
Tests conditions
Value
Unit
Min.
Typ.
Max.
IR
Reverse leakage current
VR =VRRM
Tj = 25°C
3
µA
Tj = 125°C
320
VRRM
Repetitive Peak Reverse
Voltage
Tj = 25°C
700
V
trr
Reverse Recovery Time
IF =1A dIF / dt = -50A/µs
VR = 30V
45
ns
VFP
Peak Forward Voltage
IF =3A
dIF / dt = 100A/µs
Tj = 25°C
12
V
Tj = 125°C
18
ELECTRICAL CHARACTERISTICS DIODE (Tj = 25°C unless otherwise specified)
Symbol
Parameter
Test conditions
Value
Unit
Min.
Typ.
Max.
IRM
Leakage current
VR = 136V
Tj = 25°C
1
µA
Tj =125°C
10
VBR
Breakdown voltage
IR = 1mA
pulse test < 50ms
Tj = 25°C
150
160
170
V
Rd
Dynamical Resistance
tp < 500ns
between I = 0.5Amps
and I = 1.5Amps
Tj = 125°C
4
αT
Temperature
Coefficient
10.8
10
-4/°C
VsCL
Surge Clamping
voltage
Ipp = 2.7Amps
10/1000µs
219
V
ELECTRICAL CHARACTERISTICS TRANSIL
In repetitive mode and for low current rating, use the equation (1) and (2) to calculate the breakdown
voltage VBR of the transil versus the operating junction temperature and use the equation (3) to calculate
the clamping voltage versus the transil current Ipp and the temperature.
∆VT T
V
C
BR
j
BR
=−
°
α ()
(
)
25
25
(1)
VT
V
C
V
BR
j
BR
BR
()
(
)
+
25
(2)
V
T
V
T
Rd Ipp
CL
j
BR
j
()
()
.
=+
(3)
CALCULATION OF THE CLAMPING VOLTAGE:
Symbol
Parameter
Typical Value
Unit
C
Total Parasitic capacitance 1MHz 30mV
35
pF
CAPACITANCE



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