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TMCSB1V474 Datasheet(PDF) 2 Page - Hitachi Semiconductor

Part # TMCSB1V474
Description  Standard Tantalum Chip Capacitors
PDF  2 Pages
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Manufacturer  HITACHI [Hitachi Semiconductor]
Direct Link  http://www.renesas.com/eng
Logo HITACHI - Hitachi Semiconductor

TMCSB1V474 Datasheet(HTML) 2 Page - Hitachi Semiconductor

  TMCSB1V474 Datasheet HTML 1Page - Hitachi Semiconductor TMCSB1V474 Datasheet HTML 2Page - Hitachi Semiconductor  
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Rated voltage Capacitance
tan
δ
Leakage current
Case
Product name
V.DC
µF
µA
code
4
3.3
0.06
0.5
A
TMCSA0G335
10
0.06
0.5
B
TMCSB0G106
33
0.06
1.3
C
TMCSC0G336
68
0.06
2.7
E
TMCSE0G686
7
2.2
0.06
0.5
A
TMCSA0J225
6.8
0.06
0.5
B
TMCSB0J685
22
0.06
1.5
C
TMCSC0J226
47
0.06
3.3
E
TMCSE0J476
10
1.5
0.06
0.5
A
TMCSA1A155
4.7
0.06
0.5
B
TMCSB1A475
15
0.06
1.5
C
TMCSC1A156
33
0.06
3.3
E
TMCSE1A336
16
1.0
0.04
0.5
A
TMCSA1C105
3.3
0.06
0.5
B
TMCSB1C335
10
0.06
1.6
C
TMCSC1C106
22
0.06
3.5
E
TMCSE1C226
20
0.68
0.04
0.5
A
TMCSA1D684
2.2
0.06
0.5
B
TMCSB1D225
6.8
0.06
1.4
C
TMCSC1D685
15
0.06
3.0
E
TMCSE1D156
Rated voltage Capacitance
tan
δ
Leakage current
Case
Product name
V.DC
µF
µA
code
25
0.47
0.04
0.5
A
TMCSA1E474
1.5
0.06
0.5
B
TMCSB1E155
4.7
0.06
1.2
C
TMCSC1E475
10
0.06
2.5
E
TMCSE1E106
35
0.1
0.04
0.5
A
TMCSA1V104
0.15
0.04
0.5
A
TMCSA1V154
0.22
0.04
0.5
A
TMCSA1V224
0.33
0.04
0.5
A
TMCSA1V334
0.47
0.04
0.5
B
TMCSB1V474
0.68
0.04
0.5
B
TMCSB1V684
1.0
0.04
0.5
B
TMCSB1V105
1.5
0.06
0.5
C
TMCSC1V155
2.2
0.06
0.8
C
TMCSC1V225
3.3
0.06
1.2
C
TMCSC1V335
4.7
0.06
1.6
E
TMCSE1V475
6.8
0.06
2.4
E
TMCSE1V685
Standard product table - TMCS series
Standard product tables - TMCS series
Marking indication TMCS series
A7A
Anode indication belt mark
Lot indication (for manufacturing in January, 2005)
Simplified code of nominal capacitance (A7 : 10
µF)
Anode indication belt mark
Rated voltage (16V)
Nominal capacitance Volue (10
µF)
10
16A
Lot indication (for manufacturing in January, 2005)
20
TANTALUM ELECTROLYTIC CAPACITORS
Hitachi AIC Inc.
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12
2005
A
B
C
D
E
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G
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J
K
L
M
2006
N
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T
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W
X
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2007
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Lot indication
Month
Year



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