STW12NK80Z datasheet(3/16 Pages) STMICROELECTRONICS

Part #	STW12NK80Z

Description	N-channel 800V - 0.65Ω - 10.5A - TO-220 - D2PAK - TO-247 Zener - Protected SuperMESH??Power MOSFET

PDF	16 Pages

Scroll/Zoom	100%

Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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3 / 16 page

STB12NK80Z - STP12NK80Z - STW12NK80Z

Electrical ratings

3/16

Electrical ratings

Table 1.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

VDS

Drain-source voltage (VGS = 0)

800

VDGR

Drain-gate voltage (RGS = 20KΩ)800

VGS

Gate-source voltage

± 30

Drain current (continuous) at TC = 25°C

10.5

Drain current (continuous) at TC=100°C

6.6

IDM

(1)

Pulse width limited by safe operating area

Drain current (pulsed)

PTOT

Total dissipation at TC = 25°C

190

Derating Factor

1.51

W/°C

dv/dt(2)

ISD ≤10.5 A, di/dt ≤200A/µs, VDD ≤V(BR)DSS, Tj ≤TJMAX

Peak diode recovery voltage slope

4.5

Tstg

Operating junction temperature

Storage temperature

-55 to 150

°C

Table 2.

Thermal data

Symbol

Parameter

Value

Unit

TO-220/

D²PAK

TO-247

Rthj-case

Thermal resistance junction-case Max

0.66

°C/W

Rthj-a

Thermal resistance junction-ambient Max

62.5

°C/W

Maximum lead temperature for soldering purpose

300

°C

Table 3.

Avalanche characteristics

Symbol

Parameter

Value

Unit

IAS

Avalanche current, repetitive or not-repetitive

(pulse width limited by Tj Max)

10.5

EAS

Single pulse avalanche energy

(starting Tj=25°C, Id=Iar, Vdd=50V)

400

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