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LE-A-P1W Datasheet(PDF) 2 Page - ams-OSRAM AG |
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LE-A-P1W Datasheet(HTML) 2 Page - ams-OSRAM AG |
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2 / 21 page  LE A P1W 2 Version 1.15 | 2020-11-05 Maximum Ratings Parameter Symbol Values Operating Temperature T op min. max. -40 °C 100 °C Storage Temperature T stg min. max. -40 °C 100 °C Junction Temperature T j max. 125 °C Forward Current T J = 125 °C; all chips operated in parallel I F min. max. 200 mA 10000 mA Forward Current pulsed D = 0.6 ; f = 240 Hz; T J = 25 °C; all chips operated in parallel I F pulse 12000 mA Surge Current t p ≤ 10 μs; D = 0.1; T J = 125 °C; all chips operated in parallel I FS max. 16000 mA ESD withstand voltage acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 2) V ESD 2 kV Reverse current 2) I R max. 200 mA |
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