LE CG P2A

3 Version 1.7 | 2020-11-05

Characteristics

T

Board = 25 °C; IF = 24000 mA; f = 1000 Hz; tint = 100 ms; D = 0.5; all chips operated in parallel

Parameter

Symbol

Values

Chromaticity Coordinate 3)

within λ = 500 ... 600 nm

Cx

Cy

typ.

typ.

0.318

0.642

Peak Wavelength

λ

peak

typ.

520 nm

Spectral bandwidth at 50% I

rel,max

∆λ

typ.

100 nm

Viewing angle at 50% I

V

2φ

typ.

120 °

Radiating surface

A

color

typ.

2.6 x 3.2 mm²

Partial Flux acc. CIE 127:2007 4)

I

F = 24000 mA

Φ

E/V, 120°

typ.

0.77

Forward Voltage 5)

I

F = 24000 mA; all chips operated in parallel

V

F

min.

typ.

max.

3.20 V

3.35 V

4.30 V

Deviation of forward voltage of all chips

V

F

max.

135 mV

Reverse voltage (ESD device)

V

R ESD

min.

45 V

Reverse voltage 2)

I

R = 20 mA

V

R

max.

1.2 V

Real thermal resistance junction/board

R

thJB real

typ.

0.7 K / W

Electrical thermal resistance junction/board

with efficiency η

e = 18 %

R

thJB elec.

typ.

0.57 K / W

Brightness Groups

Group

Luminous Flux 1)

Luminous Flux 1)

I

F = 24000 mA

I

F = 24000 mA

min.

max.

Φ

V

Φ

V

7U

5600 lm

6300 lm

8U

6300 lm

7100 lm

5V

7100 lm

8000 lm

6V

8000 lm

9000 lm

7V

9000 lm

10000 lm