LE-RTDUW-S2W datasheet(3/27 Pages) AMSOSRAM

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LE RTDUW S2W

3 Version 1.5 | 2020-07-15

Characteristics

F = 700 mA; TS = 25 °C

Parameter

Symbol

Values

● red

● true green

● deep blue

● ultra white

Chromaticity Coordi-

nate

0.31

0.32

Peak Wavelength

peak

typ.

632 nm

520 nm

449 nm

Dominant Wave-

length 3)

dom

min.

typ.

max.

620 nm

625 nm

632 nm

521 nm

527 nm

533 nm

449 nm

453 nm

457 nm

Spectral bandwidth at

50% I

rel,max

∆λ

typ.

18 nm

33 nm

25 nm

Viewing angle at 50%

2φ

typ.

120 °

Radiating surface

For value(s) see red

column, all chips oper-

ated simultaneously

color

typ.

2.1 x 2.1 m²

Partial Flux acc. CIE

127:2007 4)

E/V 120° = x * ΦE/V 180°

E/V, 120°

typ.

0.82

Forward Voltage 5)

F = 700 mA

min.

typ.

max.

2.10 V

2.50 V

2.90 V

3.60 V

4.20 V

2.90 V

3.45 V

4.00 V

2.90 V

3.45 V

4.00 V

Reverse voltage (ESD

device)

R ESD

min.

5 V

Reverse voltage 2)

R = 20 mA

max.

1.2 V

Real thermal resistance

junction/solderpoint 6)

For value(s) see red

column, all chips oper-

ated simultaneously

thJS real

typ.

max.

1.8 K / W

2.3 K / W

Electrical thermal resis-

tance junction/solder-

point 6)

With efficien-

cy η

e = 23%;

for value(s) see red col-

umn, all chips operated

simultaneously

thJS elec.

typ.

max.

1.4 K / W

1.8 K / W

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