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LE-T-Q7WN Datasheet(PDF) 5 Page - ams-OSRAM AG |
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LE-T-Q7WN Datasheet(HTML) 5 Page - ams-OSRAM AG |
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5 / 25 page ![]() LE T Q7WN DATASHEET DATASHEET 5 | Version 1.0 | 2025-06-25 Characteristics I F = 1000 mA; TS = 25 °C; per chip Parameter Symbol Values Peak Wavelength λ peak typ. 521 nm Dominant Wavelength 3) λ dom min. typ. max. 519 nm 525 nm 531 nm Spectral bandwidth at 50% I rel,max ∆λ typ. 30 nm Viewing angle at 50% I V 2φ typ. 120 ° Radiating surface A color typ. 0.96 x 2.05 mm² Partial Flux acc. CIE 127:2007 4) I F = 1000 mA Φ E/V, 120° typ. 0.76 Forward Voltage 5) I F = 1000 mA V F min. typ. max. 2.30 V 2.90 V 3.30 V Reverse voltage (ESD device) V R ESD min. 45 V Reverse voltage 2) I R = 20 mA V R max. 1.2 V Real thermal resistance junction/solderpoint 6) R thJS real typ. max. 1.7 K / W 2.1 K / W Electrical thermal resistance junction/solderpoint 6) with efficiency η e = 20 % R thJS elec. typ. max. 1.4 K / W 1.7 K / W |
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