BUL38D datasheet(1/2 Pages) ISC

Part #	BUL38D

Description	Silicon NPN Power Transistor

PDF	2 Pages

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Manufacturer	ISC [Inchange Semiconductor Company Limited]

Direct Link	http://www.iscsemi.cn

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Silicon NPN Power Transistor

BUL38D

www.iscsemi.com

1

DESCRIPTION

· Collector-Emitter Breakdown Voltage

-V(BR)CEO= 450V(Min)

· Collector-Emitter Saturation Voltage

-VCE(sat) :1.1V(Max) @IC= 3A

APPLICATIONS

· Switch mode power supplies

· Electronic transformers for halogen lamps

ABSOLUTE MAXIMUM RATINGS(TC=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCES

Collector-Emitter Voltage(VBE=0V)

800

V

VCEO

Collector-Emitter Voltage(IB=0)

450

V

VEBO

Emitter-Base Voltage(IC=0A)

9

V

IC

Collector Current

5

A

ICM

Collector Peak Current(tp＜5ms)

10

A

IB

Base current

2

A

IBM

Base peak current(tp＜5ms)

4

A

PC

Total Power Dissipation

80

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-65~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

1.56

℃

/W

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BUL38D Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

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