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SD1650 Datasheet(PDF) 1 Page - STMicroelectronics |
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SD1650 Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 5 page ![]() CELLULAR BASE STATION APPLICATIONS RF & MICROWAVE TRANSISTORS .400 6LFL (M169) epoxy sealed . REFRACTORY/GOLD METALLIZATION . DOUBLE STEP INPUT/OUTPUT MATCH . 850-960 MHz CLASS AB LINEAR . COMMON EMITTER . POUT = 60 W MIN. WITH 7 dB MIN GAIN DESCRIPTION Designed for 900 MHz cellular radio base station applications, the SD1650 exhibits high collector efficiency with excellent thermal characteristics. Double-section internal input/output matching re- sult in terminal impedance levels easily handled by the circuit designer. PIN CONNECTION BRANDI NG SCELL500 ORDER CODE SD1650 ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter Value Uni t VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 28 V VEBO Emitter-Base Voltage 4.0 V IC Device Current 10 A PDISS Power Dissipation (+25 °C) 175 W TJ Junction Temperature +200 °C TSTG Storage Temperature − 65 to +150 °C RTH(j-c) Junction-Case Thermal Resistance 1.5 °C/W *Applies only to rated RF amplifier operation SD1650 1. Collector 3. Emitter 2. Base THERMAL DATA August 1992 1/5 |
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