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STP80PF55 Datasheet(PDF) 5 Page - STMicroelectronics |
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STP80PF55 Datasheet(HTML) 5 Page - STMicroelectronics |
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5 / 13 page  STB80PF55 - STP80PF55 Electrical characteristics 5/13 Table 5. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) tr Turn-on delay time Rise time VDD=25V, ID=40A, RG=4.7Ω, VGS=10V (see Figure 13) 35 190 ns ns td(off) tf Turn-off delay time Fall time VDD=25V, ID=40A, RG=4.7Ω, VGS=10V (see Figure 13) 165 80 ns ns tr(Voff) tf tc Off-voltage rise time Fall time Cross-over time Vclamp=40V, ID=80A, RG=4.7Ω, VGS=10V (see Figure 13) 60 40 85 ns ns ns Table 6. Source drain diode Symbol Parameter Test condictions Min Typ. Max Unit ISD ISDM (1) 1. Pulse width limited by Tjmax Source-drain current Source-drain current (pulsed) 10 40 A A VSD (2) 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5 % Forward on voltage ISD = 80A, VGS = 0 1.6 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 80A, di/dt = 100A/µs VDD = 25V, Tj =150°C 110 495 9 ns µC A |
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