SD2923

RF POWER TRANSISTORS

HF/VHF/UHF N-CHANNEL MOSFETs

s

GOLD METALLIZATION

s

EXCELLENT THERMAL STABILITY

s

COMMON SOURCE CONFIGURATION

s

Pout = 300W MIN. WITH 16 dB GAIN @ 30

MHz

s

THERMALLY ENHANCED PACKAGING

DESCRIPTION

The SD2923 is a gold metallized N-Channel MOS

field-effect RF power transistor. It is intended for

use in 50 V DC large signal applications up to

150 MHz

PIN CONNECTION

November 1999

Symbol

Parameter

Val ue

Uni t

Drain Source Voltage

125

V

Ω)

125

V

Gat e-Source Volt age

±20

V

Drain Current

40

A

Power Dissipation

648

W

Max. O perating Junction Temperature

200

Storage T emperat ure

-65 to 150

THERMAL DATA

Junction-Case Thermal Resistance

Case-Heatsink T hermal Resistance

∗

0.27

0.15

* Determined using a flat aluminum or copper heatsink with thermal compound applied (Dow Corning 340 or equivalent).

M177

epoxy sealed

®

ORDER CODE

BRANDING

SD2923

SD2923

1. Drain

4. Source

2. Source

5. Source

3. Gate

1/8