74HC_HCT30

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© NXP Semiconductors N.V. 2015. All rights reserved.

Product data sheet

Rev. 7 — 2 December 2015

4 of 15

NXP Semiconductors

74HC30; 74HCT30

8-input NAND gate

6.

Functional description

[1]

H = HIGH voltage level; L = LOW voltage level; X = don’t care.

7.

Limiting values

[1]

The input and output voltage ratings may be exceeded if the input and output current ratings are observed.

[2]

For SO14 package: Ptot derates linearly with 8 mW/K above 70 C.

For (T)SSOP14 packages: Ptot derates linearly with 5.5 mW/K above 60 C.

Table 3.

Function table[1]

Input

Output

A

B

C

D

E

F

G

H

Y

L

XX

XXX

XXH

XL

X

XXX

XXH

XXL

XXX

XXH

XXX

L

XX

XXH

XXX

XL

X

XXH

XXX

XXL

XXH

XXX

XXX

L

XH

XXX

XXX

XL

H

HHH

HHH

HHL

Table 4.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).

Symbol

Parameter

Conditions

Min

Max

Unit

VCC

supply voltage

0.5

+7

V

IIK

input clamping current

VI < 0.5 V or VI >VCC +0.5 V

[1]

-

20

mA

IOK

output clamping current

VO < 0.5 V or VO >VCC +0.5 V

[1]

-

20

mA

IO

output current

0.5 V < V

O < VCC +0.5 V

-

25

mA

ICC

supply current

-

50

mA

IGND

ground current

50

-

mA

Tstg

storage temperature

65

+150

C

Ptot

total power dissipation

SO14, (T)SSOP14 packages

[2]

-500

mW