RT1P237M datasheet(2/3 Pages) ISAHAYA

2 / 3 page

〈Transistor〉

ＲＴ１Ｐ２３７Ｘ SERIES

Transistor With Resistor

For Switching Application

Silicon PNP Epitaxial Type

MAXIMUM RATING (Ta=25℃)

RATING

SYMBOL

PARAMETER

RT1P237Ｔ

RT1P237U

RT1P237M

RT1P237C

RT1P237S

UNIT

Ｖ

ＣＢＯ

Collector to Base voltage

-50

Ｖ

ＥＢＯ

Emitter to Base voltage

-6

Ｖ

ＣＥＯ

Collector to Emitter voltage

-50

Ｉ

Ｃ

Collector current

-100

Ｉ

ＣＭ

Peak Collector current

-200

Ｐ

Ｃ

Collector dissipation(Ta=25℃)

125（※）

150

200

450

Ｔｊ

Junction temperature

+125

+150

℃

Ｔｓｔｇ

Storage temperature

-55～+125

-55～+150

℃

（※ ） package mounted on 9mm×19mm×1mm glass-epoxy substrate.

ELECTRICAL CHARACTERISTICS (Ta=25℃)

LIMIT

SYMBOL

PARAMETER

TEST CONDITION

MIN

TYP

MAX

UNIT

Ｖ

（ＢＲ）ＣＥＯ

C to E break down voltage

C=-100μA，RBE=∞

-50

Ｉ

ＣＢＯ

Collector cut off current

CB=-50V，I E =0

-0.1

μA

ｈ

ＦＥ

DC forward current gain

CE=-5V，I C =-10mA

－

Ｖ

ＣＥ（ｓａｔ）

C to E saturation voltage

C =-10mA，I B =-0.5mA

-0.3

Ｖ

Ｉ（ＯＮ）

Input on voltage

CE=-0.2V，I C =-5mA

-0.7

-1.1

Ｖ

Ｉ（ＯＦＦ）

Input off voltage

CE=-5V，I C =-100μA

-0.5

-0.6

Ｒ

１

Input resistance

1.5

2.2

2.9

kΩ

Ｒ

２／Ｒ１

Resistance ratio

ｆ

Ｔ

Gain band width product

CE=-6V，I E =10mA

150

MHz

TYPICAL CHARACTERISTICS

COL L ECTOR C U R R EN T

VS. INP UT OF F V OL TA GE

-10

-100

-1000

-2

-1.6

-1.2

-0.8

-0.4

INPUT OFF VOLTAGE　ＶＩ（ＯＦＦ）（Ｖ）

VCE=-5V

IN P U T ON V OL TA GE

V S.C OLLEC TOR C U R R ENT

-0.1

-1

-10

-1

-10

-100

COLLECTOR CURRENT　ＩＣ（ｍＡ）

VCE=-0.2V

D C F OR W A R D C UR R EN T G AIN

V S.C OLLEC TOR C U R R ENT

100

1000

-1

-10

-100

COLLECTOR CURRENT　ＩＣ（ｍＡ）

VCE=-5V

ISAHAYA ELECTRONICS CORPORATION

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