STB22NE03L datasheet(1/6 Pages) STMICROELECTRONICS

Part #	STB22NE03L

Description	N - CHANNEL 30V - 0.034ohm - 22A TO-263 STripFET] POWER MOSFET

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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STB22NE03L

N - CHANNEL 30V - 0.034

Ω - 22A TO-263

STripFET

™ POWER MOSFET

PRELIMINARY DATA

s

TYPICAL RDS(on) = 0.034

Ω

s

EXCEPTIONAL dv/dt CAPABILITY

s

100% AVALANCHE TESTED

s

LOW GATE CHARGE AT 100

oC

s

APPLICATION ORIENTED

CHARACTERIZATION

s

ADD SUFFIX ”T4” FOR ORDERING IN TAPE

& REEL

DESCRIPTION

This Power MOSFET is the latest development of

STMicroelectronics

unique

”Single

Feature

Size

™” strip-based

process. The resulting

transistor shows extremely high packing density

for

low

on-resistance,

rugged

avalanche

characteristics and less critical alignment steps

therefore

a

remarkable

manufacturing

reproducibility.

APPLICATIONS

s

HIGH CURRENT, HIGH SPEED SWITCHING

s

SOLENOID AND RELAY DRIVERS

s

MOTOR CONTROL, AUDIO AMPLIFIERS

s

DC-DC & DC-AC CONVERTERS

s

AUTOMOTIVE ENVIRONMENT

®

INTERNAL SCHEMATIC DIAGRAM

April 1999

1

3

D

2PAK

TO-263

(suffix ”T4”)

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Un it

VDS

Drain-source Voltage (VGS =0)

30

V

VDGR

Drain- gate Voltage (RGS =20 k

Ω)30

V

VGS

G ate-source Volt age

± 15

V

ID

Drain Current (continuous) at Tc =25

oC22

A

ID

Drain Current (continuous) at Tc =100

oC16

A

IDM (

•)

Drain Current (pulsed)

88

A

Ptot

T otal Dissipat ion at Tc =25

oC60

W

Derating Factor

0.4

W /

o C

dv/dt (1)

Peak Diode Recovery voltage slope

6

V/ns

Tstg

Storage Temperature

-65 to 175

o C

Tj

Max. Operating Junction Temperature

175

o C

(

•) Pulse width limited by safe operating area

( 1)ISD

≤ 22 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMAX

TYPE

VDSS

RDS(on)

ID

STB22NE03L

30 V

<0.05

Ω

22 A

1/6

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