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EMC646SP16JS-45LF Datasheet(PDF) 56 Page - Emerging Memory & Logic Solutions Inc |
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EMC646SP16JS-45LF Datasheet(HTML) 56 Page - Emerging Memory & Logic Solutions Inc |
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56 / 65 page ![]() EMC646SP16J 4Mx16 CellularRAM 56 Preliminary Figure 45. Asynchronous WRITE Followed by Burst READ Note: 1. Non-default BCR settings for asynchronous WRITE followed by burst READ: Fixed or variable latency; latency code two (three clocks); WAIT active LOW; WAIT asserted during delay. 2. When transitioning between asynchronous and variable-latency burst operations, CE# must go HIGH. CE# can stay LOW when transitioning to fixed-latency burst READs. A refresh opportunity must be provided every tCEM. A refresh opportunity is satisfied by either of the following two conditions: a) clocked CE# HIGH, or b) CE# HIGH for longer than 15ns. CLK ADV# CE# OE# WAIT DQ[15:0] Don’t Care Undefined A[21:0] LB#/UB# VIH VIL WE# VIH VIL VIH VIL VIH VIL VIH VIL VIH VIL VIH VIL VOH VOL VIH VIL Note 2 Valid Address Valid Output tAS VOH VOL Valid Output Valid Output Valid Output tCBPH tOHZ tCEW tBOE tACLK tKOH Data Valid Address Valid Address Data tCLK tWC tWC tSP tHD tSP tHD tAW tWR tAVS tVP tVS tCW tCSP tWC tBW tSP tSP tHD tAS tWP tWPH tDH tDW High-Z High-Z tAVH tCVS High-Z tHD IN/OUT |
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