STB50NE10 datasheet(3/8 Pages) STMICROELECTRONICS

3 / 8 page

ELECTRICAL CHARACTERISTICS (continued)

SWITCHING ON

Symbo l

Parameter

Test Con ditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on Time

Rise Time

VDD =50 V

ID =25 A

RG =4.7

Ω

VGS =10 V

(see t est circuit, f igure 3)

100

135

Q gs

Qgd

Tot al G ate Charge

Gat e-Source Charge

Gat e-Drain Charge

VDD =80 V

ID =50 A

VGS = 10 V

123

166

SWITCHING OFF

Symbo l

Parameter

Test Con ditions

Min.

Typ.

Max.

Unit

tr(Voff)

Off -volt age Rise T ime

Fall T ime

Cross-over Time

VDD =80 V

ID =50 A

RG =4.7

Ω VGS =10 V

(see t est circuit, f igure 5)

SOURCE DRAIN DIODE

Symbo l

Parameter

Test Con ditions

Min.

Typ.

Max.

Unit

ISD

ISDM (

•)

Source-drain Current

(pulsed)

200

VSD (

∗)Forward On Voltage

ISD =50 A

VGS =0

1. 5

trr

Qrr

IRRM

Reverse Recovery

Time

Reverse Recovery

Charge

Reverse Recovery

Current

ISD = 50 A

di/ dt = 100 A/

µs

VDD =30 V

Tj = 150

(see t est circuit, f igure 5)

155

815

10.5

210

1100

(

∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

(

•) Pulse width limited by safe operating area

Safe Operating Area

Thermal Impedance

STB50NE10

3/8

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