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STB55NE06L Datasheet(PDF) 1 Page - STMicroelectronics |
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STB55NE06L Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 5 page  STB55NE06L N - CHANNEL ENHANCEMENT MODE " SINGLE FEATURE SIZE ™ " POWER MOSFET PRELIMINARY DATA s TYPICAL RDS(on) = 0.018 Ω s EXCEPTIONAL dv/dt CAPABILITY s 100% AVALANCHE TESTED s LOW GATE CHARGE 100 oC s APPLICATION ORIENTED CHARACTERIZATION s FOR THROUGH-HOLE VERSION CONTACT SALES OFFICE DESCRIPTION This Power Mosfet is the latest development of SGS-THOMSON unique "Single Feature Size ™ " strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s MOTOR CONTROL, AUDIO AMPLIFIERS s DC-DC & DC-AC CONVERTERS s AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc. ) INTERNAL SCHEMATIC DIAGRAM March 1998 1 3 D 2PAK TO-263 (suffix "T4") ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 60 V VDGR Drain- gate Voltage (RGS = 20 k Ω) 60 V VGS Gate-source Voltage ± 15 V ID Drain Current (continuous) at Tc = 25 o C55 A ID Drain Current (continuous) at Tc = 100 oC39 A IDM( •) Drain Current (pulsed) 220 A Ptot Total Dissipation at Tc = 25 oC130 W Derating Factor 0.86 W/ oC dv/dt Peak Diode Recovery voltage slope 7 V/ns Tstg Storage Temperature -65 to 175 oC Tj Max. Operating Junction Temperature 175 oC ( •) Pulse width limited by safe operating area (1) ISD ≤ 55 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX TYPE VDSS RDS(on) ID STB55NE06L 60 V < 0.022 Ω 55A 1/5 |
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