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EMC646SP16JS-10L Datasheet(PDF) 59 Page - Emerging Memory & Logic Solutions Inc

Part # EMC646SP16JS-10L
Description  4Mx16 bit CellularRAM
PDF  65 Pages
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Manufacturer  EMLSI [Emerging Memory & Logic Solutions Inc]
Direct Link  http://www.emlsi.com
Logo EMLSI - Emerging Memory & Logic Solutions Inc

EMC646SP16JS-10L Datasheet(HTML) 59 Page - Emerging Memory & Logic Solutions Inc

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EMC646SP16J
4Mx16 CellularRAM
59
Preliminary
Figure 48. Burst READ Followed by Asynchronous WRITE Using ADV#
Note:
1. Non-default BCR settings for burst READ followed by asynchronous WRITE using ADV#: Fixed or variable latency; latency code two (three
clocks); WAIT active LOW; WAIT asserted during delay.
2. When transitioning between asynchronous and variable-latency burst operations, CE# must go HIGH. CE# can stay LOW when transitioning from
fixed-latency burst READs; asynchronous operation begins at the falling edge of ADV#. A refresh opportunity must be provided every tCEM. A
refresh opportunity is satisfied by either of the following two conditions: a) clocked CE# HIGH, or b) CE# HIGH for longer than 15ns.
CLK
ADV#
CE#
OE#
WAIT
DQ[15:0]
tCEW
Don’t Care
Undefined
tHD
tCSP
A[21:0]
Valid Address
tCLK
tSP
tHD
tSP
tHD
tSP
tHD
Valid Output
LB#/UB#
tACLK
tKOH
tHZ
tOHZ
tOLZ
tBOE
tSP
tKHTL
READ Burst Identified
(WE# = HIGH)
VIH
VIL
WE#
VIH
VIL
VIH
VIL
VIH
VIL
VIH
VIL
VIH
VIL
VIH
VIL
VOH
VOL
VOH
VOL
tWPH
Valid Input
tVS
tCBPH
tAS
tWP
tBW
tHZ
tDH
tDW
tCEW
tAVS
tVP
tAW
tCW
tAS
VIH
VIL
High-Z
High-Z
Valid Address
Note 2
tAVH
tHD
High-Z



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