EMC326SP16AJS-90L datasheet(2/64 Pages) EMLSI

2 / 64 page

EMC326SP16AJ

2Mx16 CellularRAM

Preliminary

32Mb Async/Page/Burst CellularRAM

FEATURES

- Sigle device supports asynchrous, page and burst operation

- Vcc, VccQ voltages:

1.7V~1.95V VCC

1.7V~1.95V VCCQ

- Random access time: 70ns

- Burst mode READ and WRITE access:

4, 8, 16, or 32 words, or continuous burst

Burst wrap or sequential

Max clock rate: 104 MHz (tCLK = 9.62ns) , 133MHz(tCLK = 7.5ns)

Burst initial latency: 38.5ns (4 clocks) @ 104 MHz ,

37.5ns(5 clocks) @ 133 MHz

tACLK: 7ns @ 104 MHz , 5.5ns @ 133 MHz

- Page mode READ access:

Sixteen-word page size

Interpage READ access : 70ns

Intrapage READ access : 20ns

- Low power consumption:

Asynchronous READ: <25mA

Intra page READ: <15mA

Initial access, burst READ:

(37.5ns [5 clocks] @ 133 MHz) <40mA

Continuous burst READ: <35mA

Deep power down: < 10uA(max.)

- Low-power features

On-chip temperature compensated self refresh (TCSR)

Partial array refresh (PAR)

Deep Power-down(DPD) mode

OPTIONS

- Configuration: 32Mb (2 megabit x 16)

- Vcc core / VccQ I/O voltage supply: 1.8V

- Timing: 70ns access

- Frequency: 83 MHz, 104 MHz, 133 MHz

- Standby current at 85°C

Low Low Power : 100

µA(max)

Low Power

: 120

µA(max)

Standard

: 140

µA(max)

- Operating temperature range:

Wireless -30°C to +85°C

EMC326SP16AJS-90L Datasheet(PDF) 2 Page - Emerging Memory & Logic Solutions Inc

EMC326SP16AJS-90L Datasheet(HTML) 2 Page - Emerging Memory & Logic Solutions Inc

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64

Datasheet Download

Link URL