STC06IE170HV datasheet(3/8 Pages) STMICROELECTRONICS

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STC06IE170HV

Electrical characteristics

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Electrical characteristics

(TCASE=25°C unless otherwise specified)

Table 3.

Electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ICS(SS)

Collector-source current

(VBS=VGS=0V)

VCS(SS)=1700V

100

µA

IBS(OS)

Base-source current

(IC=0, VGS=0V)

VBS(OS)=30V

µA

ISB(OS)

Source-base current

(IC=0, VGS=0V)

VSB(OS)=17V

100

µA

IGS(OS)

Gate-source leakage

(VBS=0V)

VGS = ±17V

100

VCS(ON) Collector-source ON voltage

VGS=10V; IC =6; IB =1.2A

VGS=10V; IC =2; IB =0.2A

0.6

hFE

DC current gain

VCS=1V; VGS=10V; IC =6A

VCS=1V; VGS=10V; IC =2A

5.5

VBS(ON) Base-source ON voltage

VGS=10V; IC =6; IB =1.2A

VGS=10V; IC =2; IB =0.12A

1.3

0.9

VGS(th)

Gate threshold voltage

VBS=VGS; IB =250µA

Ciss

Input capacitance

VCS=25V; VGS=0V; f =1MHz

TBD

QGS(tot) Gate-source charge

VGS=10V

TBD

Inductive load

Storage time

Fall time

TBD

Inductive load

Storage time

Fall time

TBD

VCS(dyn)

Collector-source dynamic

voltage (500ns)

TBD

VCS(dyn)

Collector-source dynamic

voltage (1

µs)

TBD

VCSW

Maximum collector-source

voltage switched without

snubber

RG=47Ω; hFE=5; IC=6A

1700

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