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STC08IE150HV Datasheet(PDF) 1 Page - STMicroelectronics |
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STC08IE150HV Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 11 page  November 2007 Rev 3 1/11 11 STC08IE150HV Emitter switched bipolar transistor ESBT® 1500V - 8A - 0.08 Ω Features ■ High voltage / high current cascode configuration ■ Low equivalent on resistance ■ Very fast-switch, up to 150 kHz ■ Squared RBSOA, up to 1500 V ■ Very low CISS driven by RG = 4.7 Ω ■ Very low turn-off cross over time Application ■ Aux SMPS for three phase mains ■ PFC Description The STC08IE150HV is manufactured in monolithic ESBT technology, aimed to provide best performance in high frequency / high voltage applications. it is designed for use in gate driven based topologies. Figure 1. Internal schematic diagrams VCS(ON) IC RCS(ON) 0.65 V 8 A 0.08 Ω TO247-4L HV 1 23 4 Table 1. Device summary Part number Marking Package Packaging STC08IE150HV C08IE150HV TO247-4L HV Tube www.st.com |
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