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STD2NB50 Datasheet(PDF) 1 Page - STMicroelectronics

Part # STD2NB50
Description  N-CHANNEL 500V - 5ohm - 1A DPAK / IPAK PowerMesh™ MOSFET
PDF  10 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STD2NB50 Datasheet(HTML) 1 Page - STMicroelectronics

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September 2001
STD2NB50
STD2NB50-1
N-CHANNEL 500V - 5
Ω - 1A DPAK / IPAK
PowerMesh™ MOSFET
s
TYPICAL RDS(on) = 5 Ω
s
100% AVALANCHE TESTED
s
VERY LOW INTRINSIC CAPACITANCES
s
ADD SUFFIX “T4” FOR ORDERING IN TAPE &
REEL
DESCRIPTION
Using the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
performances. The new patent pending strip layout
coupled with the Company’s proprieraty edge termi-
nation structure, gives the lowest RDS(on) per area,
exceptional avalanche and dv/dt capabilities and
unrivalled gate charge and switching characteris-
tics.
APPLICATIONS
s
SWITH MODE POWER SUPPLIES (SMPS)
s
LIGHTING FOR INDUSTRIAL AND CONSUMER
ENVIRONMENT
ABSOLUTE MAXIMUM RATINGS
(•)Pulse width limited by safe operating area
TYPE
VDSS
RDS(on)
ID
STD2NB50
STD2NB50-1
500V
500V
< 6
Ω
< 6
Ω
1 A
1 A
Symbol
Parameter
Value
Unit
VDS
Drain-source Voltage (VGS = 0)
500
V
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
500
V
VGS
Gate- source Voltage
± 30
V
ID
Drain Current (continuos) at TC = 25°C
1A
ID
Drain Current (continuos) at TC = 100°C
0.63
A
IDM (q)
Drain Current (pulsed)
4
A
PTOT
Total Dissipation at TC = 25°C
40
W
Derating Factor
0.32
W/°C
dv/dt(1)
Peak Diode Recovery voltage slope
3.5
V/ns
Tstg
Storage Temperature
–65 to 150
°C
Tj
Max. Operating Junction Temperature
150
°C
(1)ISD ≤1A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
3
2
1
1
3
DPAK
IPAK
INTERNAL SCHEMATIC DIAGRAM


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