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STD5N20 Datasheet(PDF) 1 Page - STMicroelectronics

Part # STD5N20
Description  N - CHANNEL 200V - 0.7ohm - 5A - TO-251/TO-252 POWER MOS TRANSISTOR
PDF  10 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STD5N20 Datasheet(HTML) 1 Page - STMicroelectronics

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STD5N20
N - CHANNEL 200V - 0.7
Ω - 5A - TO-251/TO-252
POWER MOS TRANSISTOR
s
TYPICAL RDS(on) = 0.7
Ω
s
AVALANCHE RUGGED TECHNOLOGY
s
100% AVALANCHE TESTED
s
REPETITIVE AVALANCHE DATA AT 100
oC
s
LOW GATE CHARGE
s
HIGH CURRENT CAPABILITY
s
150
oC OPERATING TEMPERATURE
s
APPLICATION ORIENTED
CHARACTERIZATION
s
THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (SUFFIX ”-1”)
s
SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX ”T4”)
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SOLENOID AND RELAY DRIVERS
s
DC-DC CONVERTERS & DC-AC INVERTERS
s
TELECOMMUNICATION POWER SUPPLIES
INDUSTRIAL MOTOR DRIVES
®
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb ol
Parameter
Value
Un it
VDS
Drain-source Volt age (VGS = 0)
200
V
VDGR
Drain- gate Voltage (RGS =20 k
Ω)
200
V
VGS
G ate-source Voltage
± 20
V
ID
Drain Current (continuous) at Tc =25
oC5
A
ID
Drain Current (continuous) at Tc =100
oC
3.5
A
IDM(
•)
Drain Current (pulsed)
20
A
Ptot
T otal Dissipation at Tc =25
oC45
W
Derating Fact or
0. 36
W /
o C
Tstg
Storage T emperature
-65 t o 150
o C
Tj
Max. Operating Junction Temperat ure
150
o C
(
•) Pulse width limited by safe operating area
TYPE
VDSS
RDS(on)
ID
STD5N20
200 V
< 0.8
Ω
5A
March 1999
3
2
1
IPAK
TO-251
(Suffix ”-1”)
1
3
DPAK
TO-252
(Suffix ”T4”)
1/10


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