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STD6N10 Datasheet(PDF) 1 Page - STMicroelectronics

Part # STD6N10
Description  N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
PDF  10 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STD6N10 Datasheet(HTML) 1 Page - STMicroelectronics

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STD6N10
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
s
TYPICAL RDS(on) = 0.35
Ω
s
AVALANCHE RUGGED TECHNOLOGY
s
100% AVALANCHE TESTED
s
REPETITIVE AVALANCHE DATA AT 100
oC
s
LOW GATE CHARGE
s
HIGH CURRENT CAPABILITY
s
175
oC OPERATING TEMPERATURE
s
APPLICATION ORIENTED
CHARACTERIZATION
s
THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (SUFFIX ”-1”)
s
SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX ”T4”)
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SOLENOID AND RELAY DRIVERS
s
REGULATORS
s
DC-DC & DC-AC CONVERTERS
s
MOTOR CONTROL, AUDIO AMPLIFIERS
s
AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
INTERNAL SCHEMATIC DIAGRAM
TYPE
VDSS
R DS(on)
ID
STD6N10
100 V
< 0. 45
Ω
6A
December 1996
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Uni t
VDS
Drain-source Voltage (VGS = 0)
100
V
VDG R
Drain- gate Voltage (RGS =20 k
Ω)
100
V
VGS
Gate-source Voltage
± 20
V
ID
Drain Current (cont inuous) at T c =25
oC6
A
ID
Drain Current (cont inuous) at T c =100
oC4
A
IDM(
•)
Drain Current (pulsed)
24
A
Ptot
Total Dissipation at Tc =25
oC35
W
Derating Factor
0. 23
W/
oC
Tstg
St orage Temperat ure
-65 to 175
oC
Tj
Max. Operat ing Junction Temperature
175
oC
(
•) Pulse width limited by safe operating area
1
3
2
IPAK
TO-251
(Suffix ”-1”)
1
3
DPAK
TO-252
(Suffix ”T4”)
1/10


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