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June 2001

.

STD6NF10

N-CHANNEL 100V - 0.22

Ω - 6A IPAK/DPAK

LOW GATE CHARGE STripFET™ POWER MOSFET

s

s

EXCEPTIONAL dv/dt CAPABILITY

s

100% AVALANCHE TESTED

s

LOW THRESHOLD DRIVE

s

THROUGH-HOLE IPAK (TO-251) POWER

PACKAGE IN TUBE (SUFFIX “-1")

s

SURFACE-MOUNTING DPAK (TO-252)

POWER PACKAGE IN TAPE & REEL

(SUFFIX “T4")

DESCRIPTION

This MOSFET series realized with STMicroelectronics

unique STripFET process has specifically been designed

to minimize input capacitance and gate charge. It is

therefore suitable as primary switch in advanced high-

efficiency, high-frequency isolated DC-DC converters for

Telecom and Computer applications. It is also intended

for any applications with low gate drive requirements.

APPLICATIONS

s

HIGH-EFFICIENCY DC-DC CONVERTERS

s

UPS AND MOTOR CONTROL

TYPE

STD6NF10

100 V

<0.250

Ω

6 A

3

2

1

1

3

IPAK

TO-251

(Suffix “-1”)

DPAK

TO-252

(Suffix “T4”)

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

100

V

100

V

Gate- source Voltage

± 20

V

6A

4A

Drain Current (pulsed)

24

A

30

W

Derating Factor

0.2

W/°C

Peak Diode Recovery voltage slope

40

V/ns

Single Pulse Avalanche Energy

200

mJ

Storage Temperature

-65 to 175

°C

Max. Operating Junction Temperature

INTERNAL SCHEMATIC DIAGRAM