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STE250N06 Datasheet(PDF) 2 Page - STMicroelectronics

Part # STE250N06
Description  N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE
PDF  8 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STE250N06 Datasheet(HTML) 2 Page - STMicroelectronics

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THERMAL DATA
Rthj-case
Rthc-h
Thermal Resistance Junction-case
Max
Thermal Resistance Case-heatsink With Conductive
Grease Applied
Max
0.27
0.05
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25
oC unless otherwise specified)
OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
Breakdown Voltage
ID = 1 mA
VGS = 0 V
60
V
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating x 0.8
Tc = 125
oC
400
2
µA
mA
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS =
± 20 V
± 400
nA
ON (
∗)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VGS(th)
Gate Threshold Voltage VDS = VGS
ID = 1 mA
2
4
V
RDS(on)
Static Drain-source On
Resistance
VGS = 10V
ID = 125 A
0.004
Ω
DYNAMIC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
gfs (
∗)Forward
Transconductance
VDS = 15 V
ID = 125 A
100
S
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS = 25 V
f = 1 MHz
VGS = 0 V
25
10000
3000
nF
pF
pF
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on Time
Rise Time
VDD = 25 V
ID = 125 A
RG = 4.7
Ω
VGS = 10 V
(see test circuit, figure 1)
95
300
ns
ns
(di/dt)on
Turn-on Current Slope
VDD = 40 V
ID = 250 A
RG = 4.7
Ω
VGS = 10 V
(see test circuit, figure 3)
440
A/
µs
Qg
Total Gate Charge
VDD = 40 V
ID = 250 A
VGS = 10 V
475
nC
STE250N06
2/8



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