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STOTG04ES Datasheet(PDF) 6 Page - STMicroelectronics |
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STOTG04ES Datasheet(HTML) 6 Page - STMicroelectronics |
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6 / 26 page  Electrical characteristics STOTG04ES 6/26 3 Electrical characteristics Table 6. Electrical characteristics Characteristics measured over recommended operating conditions unless otherwise is noted. All typical values are referred to TA = 25°C, VIF = 1.8V, VBAT = 3.3V, RS = 20Ω, CEXT = 220nF, CT = 4.7µF and CTRM = 1µF Symbol Parameter Test Conditions Min. Typ. Max. Unit IIF Digital Part Supply Current Active mode (1,2) 0.6 1.6 mA Power down mode 1 µA IBAT Operating Supply Current Transceiver current while transmitting and receiving (1,2) 4.5 7 mA Charge pump current, ILOAD = 8mA 17 25 Power down mode (3) 1 µA LOGIC INPUTS AND OUTPUTS VOH HIGH level output voltage IOH = -100µA VIF-0.15 V IOH = -2mA VIF-0.40 V VOL LOW level output voltage IOL = 100µA 0.15 V IOL = 2mA 0.40 V VIH HIGH level input voltage 0.7VIF V VIL LOW level input voltage 0.3VIF V ILKG Input leakage current -1 1 µA IOZ Off-state output current -5 5 µA VBUS VBUS VBUS output voltage ILOAD = 8mA 4.4 4.9 5.25 V VBUS_LKG VBUS leakage voltage No Load 3 200 mV VBUS_RIP VBUS output ripple ILOAD = 8mA, CT = 4.7µF 30 60 mV fCP Charge-pump switching frequency (2) 0.5 0.8 1.5 MHz RVBUS VBUS input impedance 40 76 100 k Ω IVBUS Maximum VBUS source current CEXT = 220 nF, VBUS > 4.4V 20 35 mA VBUS_VLD VBUS valid comparator threshold Low to high transition 4.40 V High to low transition 4.40 VSES_VLD Session valid comparator threshold for both A and B devices Low to high transition 0.8 2.0 V High to low transition 0.8 2.0 RVBUS_PU VBUS charge pull-up resistance 281 640 Ω RVBUS_PD VBUS discharge pull-down resistance 656 1260 Ω ID VID_BIAS ID pin bias voltage RCP_ID = 140kΩ, VBAT ≤5V 1.3 1.9 3.0 V RID_PU ID pin pull-up resistance 70 105 130 k Ω RID_GND ID line short resistance to detect id_gnd state 10 Ω RID_FLOAT ID line short resistance to detect id_float state 800 k Ω |
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