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74H1G66STR Datasheet(PDF) 1 Page - STMicroelectronics |
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74H1G66STR Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 10 page ![]() 1/10 July 2001 s HIGH SPEED: tPD = 4ns (TYP.) at VCC = 4.5V s LOW POWER DISSIPATION: ICC = 1µA(MAX.) at TA=25°C s HIGH NOISE IMMUNITY: VNIH = VNIL = 28% VCC (MIN.) s LOW "ON" RESISTANCE: RON = 50Ω (TYP.) AT VCC = 9V II/O = 100µA s SINE WAVE DISTORTION: 0.042% AT VCC = 4V f = 1KHz s WIDE OPERATING RANGE: VCC (OPR) = 2V TO 12V DESCRIPTION The 74H1G66 is a CMOS SINGLE BILATERAL SWITCH fabricated in silicon gate C2MOS technology. It achieves high speed performance combined with true CMOS low power consumption. The C input is provided to control the switch and it’s compatible with standard CMOS output; the switch is ON (port I/O is connected to Port O/I) when the C input is held high and OFF (high impedance state exists between the two ports) when C is held low. All inputs and output are equipped with protection circuits against static discharge, giving them ESD immunity and transient excess voltage. 74H1G66 SINGLE BILATERAL SWITCH PIN CONNECTION AND IEC LOGIC SYMBOLS ORDER CODES PACKAGE T & R SOT23-5L 74H1G66STR SOT23-5L |
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