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PRELIMINARY DATA

January 2001

STN3PF06

P-CHANNEL 60V - 0.18

Ω - 3A SOT-223

STripFET™ II POWER MOSFET

s

s

EXCEPTIONAL dv/dt CAPABILITY

s

AVALANCHE RUGGED TECHNOLOGY

s

100% AVALANCHE TESTED

s

LOW THRESHOLD DRIVE

DESCRIPTION

This Power Mosfet is the latest development of STMi-

croelectronics unique “Single Feature Size

based process. The resulting transistor shows ex-

tremely high packing density for low on-resistance,

rugged avalance characteristics and less critical

alignment steps therefore a remarkable manufactur-

ing reproducibility.

APPLICATIONS

s

DC-DC & DC-AC CONVERTERS

s

DC MOTOR CONTROL (DISK DRIVES, etc.)

ABSOLUTE MAXIMUM RATINGS

Note: For the P-CHANNEL MOSFET actual poloarity of Voltages and

current has to be reversed

TYPE

STN3PF06

60V

<0.20

Ω

2.5A

Symbol

Parameter

Value

Unit

60

V

60

V

Gate- source Voltage

±20

V

2.5

A

1.5

A

Drain Current (pulsed)

10

A

2.5

W

Derating Factor

0.02

W/°C

dv/dt(1)

Peak Diode Recovery voltage slope

6

V/ns

Storage Temperature

–65 to 175

°C

Max. Operating Junction Temperature

150

°C

SOT-223

1

2

2

3

INTERNAL SCHEMATIC DIAGRAM