STP11NC40FP datasheet(2/10 Pages) STMICROELECTRONICS

2 / 10 page

STP11NC40, STP11NC40FP

2/10

ABSOLUTE MAXIMUM RATINGS

(

l) Pulse width limited by safe operating area

(1) ISD ≤9.5A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.

(*) Limited only by maximum temperature allowed

THERMAL DATA

AVALANCHE CHARACTERISTICS

ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)

ON/OFF

Symbol

Parameter

Value

Unit

STP11NC40

STP11NC40FP

VDS

Drain-source Voltage (VGS = 0)

400

VDGR

Drain-gate Voltage (RGS = 20 kΩ)

400

VGS

Gate- source Voltage

± 30

Drain Current (continuos) at TC = 25°C

9.5

9.5 (*)

Drain Current (continuos) at TC = 100°C

6 (*)

IDM (l)

Drain Current (pulsed)

38 (*)

PTOT

Total Dissipation at TC = 25°C

120

Derating Factor

0.96

0.24

W/°C

dv/dt (1)

Peak Diode Recovery voltage slope

3.5

V/ns

VISO

Insulation Withstand Voltage (DC)

2500

Tstg

Operating Junction Temperature

Storage Temperature

-55 to 150

°C

TO-220

TO-220FP

Rthj-case

Thermal Resistance Junction-case Max

1.04

4.1

°C/W

Rthj-amb

Thermal Resistance Junction-ambient Max

62.5

°C/W

Maximum Lead Temperature For Soldering Purpose

300

°C

Symbol

Parameter

Max Value

Unit

IAR

Avalanche Current, Repetitive or Not-Repetitive

(pulse width limited by Tj max)

9.5

EAS

Single Pulse Avalanche Energy

(starting Tj = 25 °C, ID = IAR, VDD = 50 V)

300

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

Breakdown Voltage

ID = 250 µA, VGS = 0

400

IDSS

Zero Gate Voltage

Drain Current (VGS = 0)

VDS = Max Rating

VDS = Max Rating, TC = 125 °C

µA

IGSS

Gate-body Leakage

Current (VDS = 0)

VGS = ± 30V

±100

VGS(th)

Gate Threshold Voltage

VDS = VGS, ID = 250µA

RDS(on)

Static Drain-source On

Resistance

VGS = 10V, ID = 5 A

0.44

0.55

Ω

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