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EMIF04-2005QCF Datasheet(PDF) 2 Page - STMicroelectronics |
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EMIF04-2005QCF Datasheet(HTML) 2 Page - STMicroelectronics |
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2 / 6 page ![]() EMIF04-2005QCF 2/6 Table 2: Absolute Ratings (Tamb = 25 °C) Table 3: Electrical Characteristics (Tamb = 25 °C) Symbol Parameter and test conditions Value Unit VPP ESD discharge EC61000-4-2 air discharge IEC61000-4-2 contact discharge ± 45 ± 8 kV Tj Junction temperature 125 °C Tstg Storage temperature range - 55 +150 °C Top Operating temperature range - 40 to + 85 °C TL Maximum lead temperature for soldering during 10s at 5mm from case 260 °C Symbol Parameter VBR Breakdown voltage IRM Leakage current @ VRM VRM Stand-off voltage VCL Clamping voltage IPP Peak pulse current αT Voltage temperature coefficient VF Forward voltage drop RI/O Series resistance between Input & Output Cline Input capacitance per line Symbol Test conditions Min. Typ. Max. Unit VBR IR = 1 mA 6 8 10 V IRM VRM = 3V per line 500 nA Rd IPP = 10A, tp = 2.5µs1 Ω RI/O 180 200 220 Ω Cin @ 0V bias 45 50 pF VBR IPP Slope = 3/Rd VRM VF IF I IRM V VCL |
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