LCDP1521RL datasheet(3/11 Pages) STMICROELECTRONICS

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LCDP1521

2 Characteristics

3/11

2.2

Electrical characteristics (TAMB = 25°C)

2.3

Absolute ratings (Tamb = 25° C, unless otherwise specified).

Symbol

Parameter

IGT

Gate triggering current

Holding current

IRM

Reverse leakage current LINE / GND

IRG

Reverse leakage current GATE / LINE

VRM

Reverse voltage LINE / GND

VGT

Gate triggering voltage

Forward drop voltage LINE / GND

VFP

Peak forward voltage LINE / GND

VDGL

Dynamic switching voltage GATE / LINE

VGATE

GATE / GND voltage

VRG

Reverse voltage GATE / LINE

Capacitance LINE / GND

Symbol

Parameter

Value

Unit

IPP

Peak pulse current (see note1)

10/1000

µs

8/20 µs

10/560 µs

5/310

µs

10/160 µs

1/20 µs

2/10

µs

ITSM

Non repetitive surge peak on-state

current (50 Hz sinusoidal)

t = 10ms

t = 1s

3.5

I2tI2t value for fusing (50 Hz sinusoidal)

t = 10 ms

0.125

A2s

IGSM

Maximum gate current (50 Hz sinusoidal)

t = 10 ms

VMLG

VMGL

Maximum voltage LINE/GND

Maximum voltage GATE/LINE

-40° C < Tamb < +85° C

-150

Tstg

Storage temperature range

Maximum junction temperature

- 55 to +

150

°C

Maximum lead temperature for soldering during 10 s

260

°C

VRM

IPP

IRM

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