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STP19N06L Datasheet(PDF) 1 Page - STMicroelectronics

Part # STP19N06L
Description  N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR
PDF  7 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP19N06L Datasheet(HTML) 1 Page - STMicroelectronics

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STP19N06L
STP19N06LFI
N - CHANNEL ENHANCEMENT MODE
LOW THRESHOLD POWER MOS TRANSISTOR
s
TYPICAL RDS(on) = 0.085
Ω
s
AVALANCHE RUGGED TECHNOLOGY
s
100% AVALANCHE TESTED
s
REPETITIVE AVALANCHE DATA AT 100
oC
s
LOW GATE CHARGE
s
LOGIC LEVEL COMPATIBLE INPUT
s
175
oC OPERATING TEMPERATURE
s
APPLICATION ORIENTED
CHARACTERIZATION
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SOLENOID AND RELAY DRIVERS
s
REGULATORS
s
DC-DC & DC-AC CONVERTERS
s
MOTOR CONTROL, AUDIO AMPLIFIERS
s
AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
INTERNAL SCHEMATIC DIAGRAM
TYPE
VDSS
RDS(on)
ID
STP19N06L
STP19N06LFI
60 V
60 V
< 0.1
Ω
< 0.1
Ω
19 A
13 A
1
2
3
TO-220
ISOWATT220
February 1995
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
STP19N06L
STP19N06LFI
VDS
Drain-source Voltage (VGS = 0)
60
V
VDGR
Drain- gate Voltage (RGS = 20 k
Ω)60
V
VGS
Gate-source Voltage
± 15
V
ID
Drain Current (continuous) at T c = 25
oC19
13
A
ID
Drain Current (continuous) at Tc = 100
oC13
9
A
IDM(
•)
Drain Current (pulsed)
76
76
A
Ptot
Total Dissipation at Tc = 25
oC80
35
W
Derating Factor
0.53
0.23
W/
oC
VISO
Insulation Withstand Voltage (DC)
2000
V
Tstg
Storage Temperature
-65 to 175
oC
Tj
Max. Operating Junction Temperature
175
oC
(
•) Pulse width limited by safe operating area
1
2
3
1/7


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