STP20NM50 datasheet(3/16 Pages) STMICROELECTRONICS

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STB20NM50-1 - STB20NM50 - STP20NM50 - STP20NM50FP

2 Electrical characteristics

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Electrical characteristics

(TCASE = 25 °C unless otherwise specified)

Table 4.

On/off states

Table 5.

Dynamic

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-Source Breakdown

Voltage

ID = 250µA, VGS= 0

500

IDSS

Zero Gate Voltage Drain

Current (VGS = 0)

VDS = Max Rating,

VDS = Max Rating,Tc = 125°C

µA

IGSS

Gate Body Leakage Current

(VDS = 0)

VGS = ±30V

100

µA

VGS(th)

Gate Threshold Voltage

VDS= VGS, ID = 250 µA

RDS(on)

Static Drain-Source On

Resistance

VGS= 10 V, ID= 10 A

0.20

0.25

Ω

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

gfs Note 4

Forward Transconductance

VDS > ID(ON) xRDS(ON)max,

ID = 10A

Ciss

Coss

Crss

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

VDS =25V, f=1 MHz, VGS=0

1480

285

Coss eq.

Note 5

Equivalent Ouput Capacitance VGS=0, VDS =0V to 400V

130

Gate Input Resistance

f=1MHz Gate DC Bias=0

Test Signal Level=20mV

Open Drain

1.6

Ω

Qgs

Qgd

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

VDD=400V, ID = 20A

VGS =10V

(see Figure 15)

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