STB20NM60 datasheet(3/15 Pages) STMICROELECTRONICS

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STP20NM60 - STP20NM60FP - STB20NM60 - STW20NM60 - STB20NM60-1

ELECTRICAL CHARACTERISTICS (CONTINUED)

Table 7: Dynamic

Table 8: Source Drain Diode

Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

2. Pulse width limited by safe operating area.

3. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80%

VDSS.

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

gfs (1)

Forward Transconductance

VDS > ID(on) x R DS(on)max,

ID = 10 A

Ciss

Coss

Crss

Input Capacitance

Output Capacitance

Reverse Transfer

Capacitance

VDS = 25V, f = 1 MHz, VGS = 0

1500

350

Coss eq. (3)

Equivalent Output

Capacitance

VGS = 0V, VDS = 0V to 400 V

215

td(on)

td(off)

Turn-on Delay Time

Rise Time

Turn-off Delay Time

Fall Time

Cross-over Time

VDD = 200 V, ID = 10 A

RG = 4.7Ω VGS = 10 V

(Resistive Load see, Figure 3)

VDD = 480 V, ID = 20 A

(See test circuit, Figure 5)

Qgs

Qgd

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

VDD = 400 V, ID = 20 A,

VGS = 10V

Gate Input Resistance

f = 1 MHz Gate DC Bias = 0

Test Signal Level = 20 mV

Open Drain

1.6

Ω

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ISD

ISDM (2)

Source-drain Current

Source-drain Current (pulsed)

VSD (1)

Forward On Voltage

ISD = 20 A, VGS = 0

1.5

trr

Qrr

IRRM

Reverse Recovery Time

Reverse Recovery Charge

Reverse Recovery Current

ISD =20 A, di/dt = 100 A/µs

VDD = 100 V, Tj = 25°C

(see test circuit, Figure 5)

390

µC

trr

Qrr

IRRM

Reverse Recovery Time

Reverse Recovery Charge

Reverse Recovery Current

ISD =20 A, di/dt = 100 A/µs

VDD = 100 V, Tj = 150°C

(see test circuit, Figure 5)

510

6.5

µC

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