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STP22NM50FP Datasheet(PDF) 1 Page - STMicroelectronics

Part # STP22NM50FP
Description  N-CHANNEL 500V - 0.16ohm - 20A TO-220/FP/D2PAK/I2PAK MDmesh™ Power MOSFET
PDF  10 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP22NM50FP Datasheet(HTML) 1 Page - STMicroelectronics

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ADVANCED DATA
January 2003
STP22NM50 - STP22NM50FP
STB22NM50 - STB22NM50-1
N-CHANNEL 500V - 0.16
Ω - 20A TO-220/FP/D2PAK/I2PAK
MDmesh™Power MOSFET
s
TYPICAL RDS(on) = 0.16Ω
s
HIGH dv/dt AND AVALANCHE CAPABILITIES
s
100% AVALANCHE TESTED
s
LOW INPUT CAPACITANCE AND GATE CHARGE
s
LOW GATE INPUT RESISTANCE
DESCRIPTION
The MDmesh™ is a new revolutionary MOSFET tech-
nology that associates the Multiple Drain process with
the Company’s PowerMESH™ horizontal layout. The
resulting product has an outstanding low on-resis-
tance, impressively high dv/dt and excellent avalanche
characteristics. The adoption of the Company’s propri-
etary strip technique yields overall dynamic perfor-
mance that is significantly better than that of similar
competition’s products.
APPLICATIONS
The MDmesh™ family is very suitable for increasing
power density of high voltage converters allowing sys-
tem miniaturization and higher efficiencies.
ABSOLUTE MAXIMUM RATINGS
(•)Pulse width limited by safe operating area
TYPE
VDSS
RDS(on)
Rds(on)*Qg
ID
STP22NM50
STP22NM50FP
STB22NM50
STB22NM50-1
500 V
500 V
500 V
500 V
<0.215
<0.215
<0.215
<0.215
6.4
Ω*nC
6.4
Ω*nC
6.4
Ω*nC
6.4
Ω*nC
20 A
20 A
20 A
20 A
Symbol
Parameter
Value
Unit
STP(B)22NM50(-1)
STP22NM50FP
VDS
Drain-source Voltage (VGS =0)
500
V
VDGR
Drain-gate Voltage (RGS =20kΩ)
500
V
VGS
Gate- source Voltage
±30
V
ID
Drain Current (continuous) at TC = 25°C
20
20(*)
A
ID
Drain Current (continuous) at TC = 100°C
12.6
12.6(*)
A
IDM (q)
Drain Current (pulsed)
80
80(*)
A
PTOT
Total Dissipation at TC = 25°C
192
45
W
Derating Factor
1.2
0.36
W/°C
dv/dt(1)
Peak Diode Recovery voltage slope
15
V/ns
VISO
Insulation Winthstand Voltage (DC)
--
2000
V
Tstg
Storage Temperature
–65 to 150
°C
Tj
Max. Operating Junction Temperature
150
°C
(1)ISD ≤20A, di/dt ≤400A/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMAX.
(*)Limited only by maximum temperature allowed
TO-220
1
2
3
TO-220FP
1
2
3
I²PAK
(Tabless TO-220)
1
3
D2PAK
INTERNAL SCHEMATIC DIAGRAM


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