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STP30NE06LFP Datasheet(PDF) 1 Page - STMicroelectronics

Part # STP30NE06LFP
Description  N - CHANNEL 60V - 0.035 ohm - 30A - TO-220/TO-220FP STripFET POWER MOSFET
PDF  9 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP30NE06LFP Datasheet(HTML) 1 Page - STMicroelectronics

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STP30NE06L
STP30NE06LFP
N - CHANNEL 60V - 0.035
Ω - 30A - TO-220/TO-220FP
STripFET
™ POWER MOSFET
s
TYPICAL RDS(on) = 0.035
Ω
s
100% AVALANCHE TESTED
s
LOW GATE CHARGE
s
APPLICATION ORIENTED
CHARACTERIZATION
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics
unique
”Single
Feature
Size
™” strip-based process. The resulting transi-
stor shows extremely high packing density for low
on-resistance, rugged avalanche characteristics
and less critical alignment steps therefore a re-
markable manufacturing reproducibility.
APPLICATIONS
s
DC MOTOR CONTROL
s
DC-DC & DC-AC CONVERTERS
s
SYNCHRONOUS RECTIFICATION
®
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb ol
Parameter
Value
Uni t
ST P30NE06L
STP30NE06L FP
VDS
Drain-source Voltage (VGS =0)
60
V
VDGR
Drain- gate Voltage (RGS =20 k
Ω)60
V
VGS
G ate-source Volt age
± 20
V
ID
Drain Current (continuous) at Tc =25
oC30
17
A
ID
Drain Current (continuous) at Tc = 100
oC21
12
A
IDM(
•)
Drain Current (pulsed)
120
68
A
Ptot
T otal Dissipation at Tc =25
oC80
30
W
Derating Factor
0.53
0.2
W/
oC
VISO
I nsulation W ithstand Voltage (DC)
2000
V
Tstg
Storage T emperature
-65 to 175
oC
Tj
Max. O perat ing Junct ion T emperature
175
oC
(
•) Pulse width limited by safe operating area
TYPE
VDSS
RDS(on)
ID
STP30NE06L
STP30NE06LF P
60 V
60 V
<0.05
Ω
<0.05
Ω
30 A
17 A
March 1999
TO-220
TO-220FP
1
2
3
1
2
3
1/9


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