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STP3NC50 Datasheet(PDF) 1 Page - STMicroelectronics

Part # STP3NC50
Description  N-CHANNEL 500V - 3ohm - 2.8A TO-220 PowerMesh™ I MOSFET
PDF  8 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP3NC50 Datasheet(HTML) 1 Page - STMicroelectronics

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May 2001
STP3NC50
N-CHANNEL 500V - 3
Ω - 2.8A TO-220
PowerMesh™II MOSFET
s
TYPICAL RDS(on) = 3 Ω
s
EXTREMELY HIGH dv/dt CAPABILITY
s
100% AVALANCHE TESTED
s
NEW HIGH VOLTAGE BENCHMARK
s
GATE CHARGE MINIMIZED
DESCRIPTION
The PowerMESH
™II is the evolution of the first
generation of MESH OVERLAY
™. The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns swithing speed, gate
charge and ruggedness.
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SWITH MODE POWER SUPPLIES (SMPS)
s
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVER
ABSOLUTE MAXIMUM RATINGS
(•)Pulse width limited by safe operating area
.
TYPE
VDSS
RDS(on)
ID
STP3NC50
500 V
< 4
Ω
2.8 A
Symbol
Parameter
Value
Unit
VDS
Drain-source Voltage (VGS = 0)
500
V
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
500
V
VGS
Gate- source Voltage
±30
V
ID
Drain Current (continuos) at TC = 25°C
2.8
A
ID
Drain Current (continuos) at TC = 100°C
1.8
A
IDM (1)
Drain Current (pulsed)
11.2
A
PTOT
Total Dissipation at TC = 25°C
75
W
Derating Factor
0.6
W/°C
dv/dt
Peak Diode Recovery voltage slope
3
V/ns
Tstg
Storage Temperature
–60 to 150
°C
Tj
Max. Operating Junction Temperature
150
°C
(1)ISD ≤ 2.8A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
TO-220
1
2
3
INTERNAL SCHEMATIC DIAGRAM


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