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STP4NC80Z Datasheet(PDF) 1 Page - STMicroelectronics |
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STP4NC80Z Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 14 page ![]() 1/14 November 2003 STP4NC80Z - STP4NC80ZFP STB4NC80Z - STB4NC80Z-1 N-CHANNEL 800V - 2.4 Ω - 4A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH™III MOSFET TO-220 1 2 3 TO-220FP 1 2 3 I2PAK (Tabless TO-220) 1 3 D2PAK s TYPICAL RDS(on) = 2.4 Ω s EXTREMELY HIGH dv/dt AND CAPABILITY GATE-TO- SOURCE ZENER DIODES s 100% AVALANCHE TESTED s VERY LOW GATE INPUT RESISTANCE s GATE CHARGE MINIMIZED DESCRIPTION The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsur- passed on-resistance per unit area while integrat- ing back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capa- bility with higher ruggedness performance as re- quested by a large variety of single-switch applications. APPLICATIONS s SINGLE-ENDED SMPS IN MONITORS, COMPUTER AND INDUSTRIAL APPLICATION s WELDING EQUIPMENT ORDERING INFORMATION TYPE VDSS RDS(on) ID STP4NC80Z/FP 800V < 2.8 Ω 4A STB4NC80Z/-1 800V < 2.8 Ω 4A SALES TYPE MARKING PACKAGE PACKAGING STP4NC80Z P4NC80Z TO-220 TUBE STP4NC80ZFP P4NC80ZFP TO-220FP TUBE STB4NC80ZT4 B4NC80Z D2PAK TAPE & REEL STB4NC80Z-1 B4NC80Z I2PAK TAPE & REEL |
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