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STP55NE06LFP Datasheet(PDF) 1 Page - STMicroelectronics |
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STP55NE06LFP Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 6 page  STP55NE06L STP55NE06LFP N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE ™ ” POWER MOSFET s TYPICAL RDS(on) = 0.018 Ω s EXCEPTIONAL dV/dt CAPABILTY s 100% AVALANCHE TESTED s LOW GATE CHARGE 100 oC s HIGH dV/dt CAPABILITY s APPLICATION ORIENTED CHARACTERIZATION DESCRIPTION This Power Mosfet is the latest development of SGS-THOMSON unique ”Single Feature Size” process whereby a single body is implanted on a strip layout structure. The resulting transistor shows extremely high packing density for low on- resistance, rugged avalanche characteristics and less critical alignment steps therefore a remark- able manufacturing reproducibility. APPLICATIONS s DC MOTOR CONTROL s DC-DC & DC-AC CONVERTERS s SYNCHRONOUS RECTIFICATION INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Valu e Uni t STP55NE06L ST P55NE06LFP VDS Drain-source Voltage (VGS =0) 60 V VDGR Drain- gate Volt age (RGS =20 k Ω) 60 V VGS Gat e-source Volt age ± 15 V ID Drain Current (continuous) at Tc =25 oC55 28 A ID Drain Current (continuous) at Tc =100 oC39 20 A IDM( •) Drain Current (pulsed) 220 220 A Ptot Tot al Dissipation at Tc =25 o C 130 35 W Derating Factor 0. 86 0.23 W/ oC VISO Insulation W it hstand Voltage (DC) 2000 V dV/ dt Peak Diode Recovery voltage slope 7 V/ ns Tstg Storage Temperature -65 to 175 oC Tj Max. O perat ing Junction Temperature 175 oC ( •) Pulse width limited by safe operating area (1)ISD ≤ 55 A,di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMAX TYPE VDSS RDS(on) ID STP55NE06L STP55NE06LF P 60 V 60 V <0.022 Ω <0.022 Ω 55 A 28 A December 1997 TO-220 TO220FP 1 2 3 1 2 3 1/6 |
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